M. Veldhorst, R. Ruskov, C. H. Yang, J. C. C. Hwang, F. E. Hudson, M. E. Flatté, C. Tahan, K. M. Itoh, A. Morello, and A. S. Dzurak
more ...Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO2 interface in …
M. Veldhorst, R. Ruskov, C.H. Yang, J.C.C. Hwang, F.E. Hudson, M.E. Flatté, C. Tahan, K.M. Itoh, A. Morello, A.S. Dzurak
more ...Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched …
Xiaojie Hao, Rusko Ruskov, Ming Xiao, Charles Tahan, HongWen Jiang
more ...Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron …
Xiaojie Hao, Rusko Ruskov, Ming Xiao, Charles Tahan, HongWen Jiang
more ...Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron …
Charles Tahan
Physicist in Washington, D.C.